Discrete Semiconductor Products

TSM6502CR RLG

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MOSFETS 60V, 24A, -60V, -18A, COMPLEMENTARY N & P-CHANNEL POWER MOSFET

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Discrete Semiconductor Products

Active

MOSFETS 60V, 24A, -60V, -18A, COMPLEMENTARY N & P-CHANNEL POWER MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	TSM6502CR RLG

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	24 A, 18 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	10.3 nC, 9.5 nC
Input Capacitance (Ciss) (Max) @ Vds	1159 pF, 930 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power - Max [Max]	40 W
Rds On (Max) @ Id, Vgs	68 mOhm, 34 mOhm
Supplier Device Package	8-PDFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Configuration	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Mounting Type	Package / Case	Drain to Source Voltage (Vdss)	Supplier Device Package	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds
Taiwan Semiconductor Corporation TSM6502CR RLG	34 mOhm 68 mOhm	18 A 24 A	150 °C	-55 °C	MOSFET (Metal Oxide)	N and P-Channel	9.5 nC 10.3 nC	2.5 V	Surface Mount	8-PowerTDFN	60 V	8-PDFN (5x6)	40 W	930 pF 1159 pF
Taiwan Semiconductor Corporation TSM6502CR	34 mOhm 68 mOhm	18 A 24 A	150 °C	-55 °C	MOSFET (Metal Oxide)	N and P-Channel	9.5 nC 10.3 nC	2.5 V	Surface Mount	8-PowerTDFN	60 V	8-PDFN (5x6)	40 W	930 pF 1159 pF

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General part information

Mosfet Array 60V 24A (Tc), 18A (Tc) 40W Surface Mount 8-PDFN (5x6)

Technical documentation and resources