Discrete Semiconductor Products

APT30GT60BRG

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IGBT NPT 600V 64A TO247

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Discrete Semiconductor Products

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IGBT NPT 600V 64A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	APT30GT60BRG

Current - Collector (Ic) (Max) [Max]	64 A
Current - Collector Pulsed (Icm)	110 A
Gate Charge	145 nC
IGBT Type	NPT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	250 W
Supplier Device Package	TO-247 [B]
Switching Energy	525 µJ, 600 µJ
Td (on/off) @ 25°C	12 ns
Td (on/off) @ 25°C	225 ns
Test Condition	15 V, 400 V, 30 A, 10 Ohm
Vce(on) (Max) @ Vge, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Mounting Type	Reverse Recovery Time (trr)	Switching Energy	Current - Collector Pulsed (Icm)	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Gate Charge	IGBT Type	Package / Case	Test Condition	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic	Current - Collector (Ic) (Max) [Max]
Microchip Technology APT30GT60BRDQ2G	Through Hole	22 ns	80 µJ 605 µJ	110 A	TO-247 [B]	600 V	7.5 nC	NPT	TO-247-3	10 Ohm 15 V 30 A 400 V	12 ns	225 ns	-55 °C	150 °C	250 W	2.5 V	64 A
Microchip Technology APT30GT60BRG	Through Hole		525 µJ 600 µJ	110 A	TO-247 [B]	600 V	145 nC	NPT	TO-247-3	10 Ohm 15 V 30 A 400 V	12 ns	225 ns	-55 °C	150 °C	250 W	2.5 V	64 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT NPT 600 V 64 A 250 W Through Hole TO-247 [B]

Technical documentation and resources