Specification	UPA1820GR-9JG-E1-A

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	20 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	27 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2020 pF
Mounting Type	Surface Mount
Package / Case	0.173 in
Package / Case	8-TSSOP
Package / Case	4.4 mm
Rds On (Max) @ Id, Vgs	8.6 mOhm
Supplier Device Package	8-TSSOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

UPA1820GR Series

N-Channel Mos Field Effect Transistor For Switching

Part	Rds On (Max) @ Id, Vgs	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Package / Case	Package / Case	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type
Renesas Electronics Corporation UPA1820GR-9JG-E1-A	8.6 mOhm	MOSFET (Metal Oxide)	12 A	27 nC	8-TSSOP	N-Channel	2020 pF	1.5 V	0.173 in	8-TSSOP	4.4 mm	20 V	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	21000	$ 1.11

General part information

The UPA1820GR is a N-Channel Mos Field Effect Transistor For Switching.

Technical documentation and resources