N-Channel Mos Field Effect Transistor For Switching
N-Channel Mos Field Effect Transistor For Switching
N-Channel Mos Field Effect Transistor For Switching
| Part | Rds On (Max) @ Id, Vgs | Technology | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | FET Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id | Package / Case | Package / Case | Package / Case | Drain to Source Voltage (Vdss) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Renesas Electronics Corporation | 8.6 mOhm | MOSFET (Metal Oxide) | 12 A | 27 nC | 8-TSSOP | N-Channel | 2020 pF | 1.5 V | 0.173 in | 8-TSSOP | 4.4 mm | 20 V | Surface Mount |