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SOT1220
Discrete Semiconductor Products

PMPB48EP,115

Active
Nexperia USA Inc.

30 V, SINGLE P-CHANNEL TRENCH MOSFET

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SOT1220
Discrete Semiconductor Products

PMPB48EP,115

Active
Nexperia USA Inc.

30 V, SINGLE P-CHANNEL TRENCH MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationPMPB48EP,115
Current - Continuous Drain (Id) @ 25°C4.7 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs26 nC
Input Capacitance (Ciss) (Max) @ Vds860 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-UDFN Exposed Pad
Power Dissipation (Max)12.5 W, 1.7 W
Rds On (Max) @ Id, Vgs50 mOhm
Supplier Device PackageDFN2020MD-6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.49
Digi-Reel® 1$ 0.49
N/A 90$ 0.76
Tape & Reel (TR) 3000$ 0.13
6000$ 0.12
9000$ 0.11
30000$ 0.11
75000$ 0.10

Description

General part information

PMPB48EP Series

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.