30 V, single P-channel Trench MOSFET
30 V, single P-channel Trench MOSFET
| Part | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Drain to Source Voltage (Vdss) | FET Type | Gate Charge (Qg) (Max) @ Vgs | Technology | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Vgs(th) (Max) @ Id | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 4.5 V 10 V | 1.7 W 12.5 W | 50 mOhm | 860 pF | 150 °C | -55 °C | Surface Mount | 30 V | P-Channel | 26 nC | MOSFET (Metal Oxide) | 4.7 A | 20 V | 2.5 V | DFN2020MD-6 | 6-UDFN Exposed Pad |