Specification	NTLJS3113PT1G

Current - Continuous Drain (Id) @ 25°C	3.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	15.7 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1329 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	700 mW
Supplier Device Package	6-WDFN (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

NTLJS3113P Series

Single P-Channel Power MOSFET -20V -7.7A 40 mΩ

Part	Power Dissipation (Max)	Technology	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Supplier Device Package	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor NTLJS3113PT1G	700 mW	MOSFET (Metal Oxide)	8 V	1329 pF	3.5 A	P-Channel	6-WDFN (2x2)	Surface Mount	20 V	1.5 V 4.5 V	-55 °C	150 °C	1 V	15.7 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Power MOSFET -20 V, -9.5 A, µCool™ Single P-Channel 2x2 mm WDFN Package

Technical documentation and resources