NTLJS3113P Series

Single P-Channel Power MOSFET -20V -7.7A 40 mΩ

Catalog

Single P-Channel Power MOSFET -20V -7.7A 40 mΩ

Part	Power Dissipation (Max)	Technology	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Supplier Device Package	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor NTLJS3113PT1G	700 mW	MOSFET (Metal Oxide)	8 V	1329 pF	3.5 A	P-Channel	6-WDFN (2x2)	Surface Mount	20 V	1.5 V 4.5 V	-55 °C	150 °C	1 V	15.7 nC

Single P-Channel Power MOSFET -20V -7.7A 40 mΩ

• WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction

• 2x2 mm Footprint Same as SC-88 Package

• Lowest RDS(on)Solution in 2x2 mm Package

• 1.5 V RDS(on)Rating for Operation at Low Voltage Logic Level Gate Drive

• Low Profile (< 0.8 mm) for Easy Fit in Thin Environments

• RoHS Compliant

Power MOSFET -20 V, -9.5 A, µCool™ Single P-Channel 2x2 mm WDFN Package