Specification	GT50J341,Q

Current - Collector (Ic) (Max) [Max]	50 A
Current - Collector Pulsed (Icm)	100 A
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	SC-65-3, TO-3P-3
Power - Max [Max]	200 W
Supplier Device Package	TO-3P(N)
Vce(on) (Max) @ Vge, Ic	2.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

GT50J341 Series

IGBTs, 600 V/50 A IGBT, Built-in Diodes, TO-3P(N)

Part	Current - Collector Pulsed (Icm)	Mounting Type	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Package / Case	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]
Toshiba Semiconductor and Storage GT50J341,Q	100 A	Through Hole	2.2 V	200 W	50 A	175 °C	SC-65-3 TO-3P-3	TO-3P(N)	600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBTs, 600 V/50 A IGBT, Built-in Diodes, TO-3P(N)

Technical documentation and resources