GT50J341 Series
IGBTs, 600 V/50 A IGBT, Built-in Diodes, TO-3P(N)
Manufacturer: Toshiba Semiconductor and Storage
Catalog
IGBTs, 600 V/50 A IGBT, Built-in Diodes, TO-3P(N)
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IGBTs, 600 V/50 A IGBT, Built-in Diodes, TO-3P(N)
IGBTs, 600 V/50 A IGBT, Built-in Diodes, TO-3P(N)
IGBTs, 600 V/50 A IGBT, Built-in Diodes, TO-3P(N)
| Part | Current - Collector Pulsed (Icm) | Mounting Type | Vce(on) (Max) @ Vge, Ic | Power - Max [Max] | Current - Collector (Ic) (Max) [Max] | Operating Temperature | Package / Case | Supplier Device Package | Voltage - Collector Emitter Breakdown (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 100 A | Through Hole | 2.2 V | 200 W | 50 A | 175 °C | SC-65-3 TO-3P-3 | TO-3P(N) | 600 V |