FDA28N50
ActivePOWER MOSFET, N-CHANNEL, UNIFET<SUP>TM</SUP>, 500 V, 28 A, 155 MΩ, TO-3P
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FDA28N50
ActivePOWER MOSFET, N-CHANNEL, UNIFET<SUP>TM</SUP>, 500 V, 28 A, 155 MΩ, TO-3P
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Technical Specifications
Parameters and characteristics for this part
| Specification | FDA28N50 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 28 A |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 5140 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-65-3, TO-3P-3 |
| Power Dissipation (Max) [Max] | 310 W |
| Rds On (Max) @ Id, Vgs | 155 mOhm |
| Supplier Device Package | TO-3PN |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 5.62 | |
| 10 | $ 3.76 | |||
| 100 | $ 2.70 | |||
| 500 | $ 2.25 | |||
| 1000 | $ 2.21 | |||
| Newark | Each | 1 | $ 6.92 | |
| 10 | $ 6.87 | |||
| 25 | $ 5.70 | |||
| 50 | $ 4.52 | |||
| 100 | $ 4.27 | |||
| 250 | $ 4.02 | |||
| ON Semiconductor | N/A | 1 | $ 2.36 | |
Description
General part information
FDA28N50F Series
UniFETTMMOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET®MOSFET has been enhanced by lifetime control. Its trris less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Documents
Technical documentation and resources