FDA28N50F Series

Power MOSFET, N-Channel, UniFETTM, FRFET®, 500 V, 28 A, 175 mΩ, TO-3P

Catalog

Power MOSFET, N-Channel, UniFETTM, FRFET®, 500 V, 28 A, 175 mΩ, TO-3P

Part	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs (Max)	FET Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]
ON Semiconductor FDA28N50	10 V	310 W	SC-65-3 TO-3P-3	5 V	-55 °C	150 °C	MOSFET (Metal Oxide)	TO-3PN	105 nC	Through Hole	5140 pF	500 V	30 V	N-Channel	155 mOhm	28 A
ON Semiconductor FDA28N50F	10 V	310 W	SC-65-3 TO-3P-3	5 V	-55 °C	150 °C	MOSFET (Metal Oxide)	TO-3PN	105 nC	Through Hole		500 V	30 V	N-Channel	175 mOhm	28 A	5387 pF

Catalog

Power MOSFET, N-Channel, UniFETTM, FRFET®, 500 V, 28 A, 175 mΩ, TO-3P

Key Features

• RDS(on)= 140mΩ ( Typ.)@ VGS= 10V, ID= 14A

• Low gate charge ( Typ. 80nC)

• Low Crss( Typ. 38pF)

• 100% avalanche tested

• Improved dv/dt capability

• RoHS compliant

Description

UniFETTMMOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET®MOSFET has been enhanced by lifetime control. Its trris less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.