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GD25LQ80EEAGR
Integrated Circuits (ICs)

GD25LQ80EEAGR

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GigaDevice Semiconductor (HK) Limited

IC FLASH 8MBIT SPI/QUAD 8USON

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GD25LQ80EEAGR
Integrated Circuits (ICs)

GD25LQ80EEAGR

Active
GigaDevice Semiconductor (HK) Limited

IC FLASH 8MBIT SPI/QUAD 8USON

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationGD25LQ80EEAGR
Access Time6 ns
Clock Frequency133 MHz
Memory FormatFLASH
Memory InterfaceQPI, SPI - Quad I/O
Memory Organization1M x 8
Memory Size1024 KB
Memory TypeNon-Volatile
Mounting TypeSurface Mount
Operating Temperature [Max]125 °C
Operating Temperature [Min]-40 °C
Package / Case8-XFDFN Exposed Pad
Supplier Device Package8-USON (3x2)
TechnologyFLASH - NOR (SLC)
Voltage - Supply [Max]2 V
Voltage - Supply [Min]1.65 V
Write Cycle Time - Word, Page [custom]100 µs
Write Cycle Time - Word, Page [custom]4 ms

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.65
Tape & Reel (TR) 3000$ 0.68
6000$ 0.64
15000$ 0.62

Description

General part information

GD25LQ80 Series

FLASH - NOR (SLC) Memory IC 8Mbit SPI - Quad I/O, QPI 133 MHz 6 ns 8-USON (3x2)

Documents

Technical documentation and resources

No documents available