GD25LQ80 Series
Manufacturer: GigaDevice Semiconductor (HK) Limited
IC FLASH 8MBIT SPI/QUAD 8USON
| Part | Memory Interface | Voltage - Supply [Min] | Voltage - Supply [Max] | Supplier Device Package | Technology | Memory Format | Access Time | Mounting Type | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Memory Organization | Package / Case | Memory Type | Clock Frequency | Memory Size | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited | QPI SPI - Quad I/O | 1.65 V | 2 V | 8-USON (3x2) | FLASH - NOR (SLC) | FLASH | 6 ns | Surface Mount | 100 µs | 4 ms | 1M x 8 | 8-XFDFN Exposed Pad | Non-Volatile | 133 MHz | 1024 KB | 125 °C | -40 °C | |||
GigaDevice Semiconductor (HK) Limited | SPI - Quad I/O | 1.65 V | 2.1 V | 8-SOP | FLASH - NOR | FLASH | Surface Mount | 50 µs | 2.4 ms | 1M x 8 | 8-SOIC | Non-Volatile | 104 MHz | 1024 KB | 85 C | -40 ¯C | 0.209 in 5.3 mm | |||
GigaDevice Semiconductor (HK) Limited | SPI - Quad I/O | 1.65 V | 2.1 V | 8-SOP | FLASH - NOR | FLASH | Surface Mount | 50 µs | 2.4 ms | 1M x 8 | 8-SOIC | Non-Volatile | 104 MHz | 1024 KB | 85 C | -40 ¯C | 0.154 in | 3.9 mm | ||
GigaDevice Semiconductor (HK) Limited | QPI SPI - Quad I/O | 1.65 V | 2 V | 8-USON (3x2) | FLASH - NOR (SLC) | FLASH | 6 ns | Surface Mount | 100 µs | 4 ms | 1M x 8 | 8-XFDFN Exposed Pad | Non-Volatile | 133 MHz | 1024 KB | 125 °C | -40 °C | |||
GigaDevice Semiconductor (HK) Limited | SPI - Quad I/O | 1.65 V | 2.1 V | 8-USON (2x3) | FLASH - NOR | FLASH | Surface Mount | 50 µs | 2.4 ms | 1M x 8 | 8-XFDFN Exposed Pad | Non-Volatile | 104 MHz | 1024 KB | 85 C | -40 ¯C | ||||
GigaDevice Semiconductor (HK) Limited | FLASH - NOR | FLASH | ||||||||||||||||||
GigaDevice Semiconductor (HK) Limited | QPI SPI - Quad I/O | 1.65 V | 2 V | 8-USON (3x2) | FLASH - NOR (SLC) | FLASH | 6 ns | Surface Mount | 60 µs | 2.4 ms | 1M x 8 | 8-XFDFN Exposed Pad | Non-Volatile | 133 MHz | 1024 KB | 85 C | -40 ¯C | |||
GigaDevice Semiconductor (HK) Limited | SPI - Quad I/O | 1.65 V | 2.1 V | 8-USON (3x4) | FLASH - NOR (SLC) | FLASH | 6 ns | Surface Mount | 80 µs | 3 ms | 1M x 8 | 8-UDFN Exposed Pad | Non-Volatile | 90 MHz | 1024 KB | 105 °C | -40 °C | |||
GigaDevice Semiconductor (HK) Limited | QPI SPI - Quad I/O | 1.65 V | 2 V | 8-SOP | FLASH - NOR (SLC) | FLASH | 6 ns | Surface Mount | 100 µs | 4 ms | 1M x 8 | 8-SOIC | Non-Volatile | 133 MHz | 1024 KB | 125 °C | -40 °C | 0.154 in | 3.9 mm | |
GigaDevice Semiconductor (HK) Limited | QPI SPI - Quad I/O | 1.65 V | 2 V | 8-SOP | FLASH - NOR (SLC) | FLASH | 6 ns | Surface Mount | 60 µs | 2.4 ms | 1M x 8 | 8-SOIC | Non-Volatile | 133 MHz | 1024 KB | 85 C | -40 ¯C | 0.209 in 5.3 mm |