Specification	QSB363YR

Current - Dark (Id) (Max) [Max]	100 nA
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Orientation	Top View
Package / Case	2-SMD, Yoke Bend
Power - Max [Max]	75 mW
Viewing Angle	24 °
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V
Wavelength	940 nm

QSB363 Series

Subminiature Plastic Silicon Infrared Phototransistor

Part	Wavelength	Operating Temperature [Max]	Operating Temperature [Min]	Orientation	Mounting Type	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Viewing Angle	Current - Dark (Id) (Max) [Max]	Current - Collector (Ic) (Max) [Max]
ON Semiconductor QSB363	940 nm	85 °C	-40 °C	Top View	Surface Mount	Axial	30 V	75 mW	24 °	100 nA
ON Semiconductor QSB363ZR	940 nm	85 °C	-40 °C	Top View	Surface Mount	2-SMD Z-Bend	30 V	75 mW	24 °	100 nA	2 mA
ON Semiconductor QSB363YR	940 nm	85 °C	-40 °C	Top View	Surface Mount	2-SMD Yoke Bend	30 V	75 mW	24 °	100 nA
ON Semiconductor QSB363GR	940 nm	85 °C	-40 °C	Top View	Surface Mount	2-SMD Gull Wing	30 V	75 mW	24 °	100 nA	2 mA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The QSB363 is a silicon phototransistor encapsulated in a black infrared transparent T-3/4 package.