QSB363 Series

Subminiature Plastic Silicon Infrared Phototransistor

Catalog

Subminiature Plastic Silicon Infrared Phototransistor

Part	Wavelength	Operating Temperature [Max]	Operating Temperature [Min]	Orientation	Mounting Type	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Viewing Angle	Current - Dark (Id) (Max) [Max]	Current - Collector (Ic) (Max) [Max]
ON Semiconductor QSB363	940 nm	85 °C	-40 °C	Top View	Surface Mount	Axial	30 V	75 mW	24 °	100 nA
ON Semiconductor QSB363ZR	940 nm	85 °C	-40 °C	Top View	Surface Mount	2-SMD Z-Bend	30 V	75 mW	24 °	100 nA	2 mA
ON Semiconductor QSB363YR	940 nm	85 °C	-40 °C	Top View	Surface Mount	2-SMD Yoke Bend	30 V	75 mW	24 °	100 nA
ON Semiconductor QSB363GR	940 nm	85 °C	-40 °C	Top View	Surface Mount	2-SMD Gull Wing	30 V	75 mW	24 °	100 nA	2 mA

Subminiature Plastic Silicon Infrared Phototransistor

• NPN silicon phototransistor

• T-3/4 (2 mm) surface mount package

• Medium wide beam angle 24°

• Black plastic package

• Matched emitters: QEB363 or QEB373

• Daylight filter

• Tape & Reel option (See tape & Reel specifications)

• Lead form options: Gullwing, Yoke, Z-Bend

The QSB363 is a silicon phototransistor encapsulated in a black infrared transparent T-3/4 package.