Discrete Semiconductor Products

SI8425DB-T1-E1

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MOSFET P-CH 20V 4WLCSP

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Discrete Semiconductor Products

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MOSFET P-CH 20V 4WLCSP

Technical Specifications

Parameters and characteristics for this part

Specification	SI8425DB-T1-E1

Current - Continuous Drain (Id) @ 25°C	5.9 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	110 nC
Input Capacitance (Ciss) (Max) @ Vds	2800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	2.7 W, 1.1 W
Rds On (Max) @ Id, Vgs	23 mOhm
Supplier Device Package	4-WLCSP (1.6x1.6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	900 mV

Part	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology	Supplier Device Package	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	FET Type
Vishay General Semiconductor - Diodes Division SI8425DB-T1-E1	23 mOhm	1.8 V 4.5 V	MOSFET (Metal Oxide)	4-WLCSP (1.6x1.6)	Surface Mount	2800 pF	1.1 W 2.7 W	5.9 A	10 V	110 nC	900 mV	-55 °C	150 °C	20 V	P-Channel

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General part information

P-Channel 20 V 5.9A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-WLCSP (1.6x1.6)

Technical documentation and resources