SI8425 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET P-CH 20V 4WLCSP
| Part | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Technology | Supplier Device Package | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 23 mOhm | 1.8 V 4.5 V | MOSFET (Metal Oxide) | 4-WLCSP (1.6x1.6) | Surface Mount | 2800 pF | 1.1 W 2.7 W | 5.9 A | 10 V | 110 nC | 900 mV | -55 °C | 150 °C | 20 V | P-Channel |