Specification	FDB1D7N10CL7

Current - Continuous Drain (Id) @ 25°C	268 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	6 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	163 nC
Input Capacitance (Ciss) (Max) @ Vds	11600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-7, D2PAK
Power Dissipation (Max) [Max]	250 W
Rds On (Max) @ Id, Vgs	1.65 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

FDB1D7N10CL7 Series

Power MOSFET, N-Channel, Standard Gate, 100 V, 268 A, 1.7 mΩ

Part	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Supplier Device Package	Power Dissipation (Max) [Max]	Package / Case	FET Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Mounting Type	Technology
ON Semiconductor FDB1D7N10CL7	163 nC	-55 °C	175 ░C	1.65 mOhm	11600 pF	268 A	100 V	TO-263 (D2PAK)	250 W	D2PAK TO-263-7	N-Channel	20 V	15 V	6 V	Surface Mount	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 8.34
		10	$ 5.69
		100	$ 4.19
	Digi-Reel®	1	$ 8.34
		10	$ 5.69
		100	$ 4.19
	Tape & Reel (TR)	800	$ 3.74
Newark	Each	500	$ 4.07
ON Semiconductor	N/A	1	$ 3.44

Description

General part information

FDB1D7N10CL7 Series

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.