FDB1D7N10CL7 Series

Power MOSFET, N-Channel, Standard Gate, 100 V, 268 A, 1.7 mΩ

Catalog

Power MOSFET, N-Channel, Standard Gate, 100 V, 268 A, 1.7 mΩ

Part	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Supplier Device Package	Power Dissipation (Max) [Max]	Package / Case	FET Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Mounting Type	Technology
ON Semiconductor FDB1D7N10CL7	163 nC	-55 °C	175 ░C	1.65 mOhm	11600 pF	268 A	100 V	TO-263 (D2PAK)	250 W	D2PAK TO-263-7	N-Channel	20 V	15 V	6 V	Surface Mount	MOSFET (Metal Oxide)

Catalog

Power MOSFET, N-Channel, Standard Gate, 100 V, 268 A, 1.7 mΩ

Key Features

• Low Qrr

• Soft recovery body diode

• Low RDS(on)

• Small Footprint (5 x 6 mm)

• RoHS compliant

Description

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.