Specification	NVD4C05NT4G

Current - Continuous Drain (Id) @ 25°C	90 A, 22 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	14 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1950 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	57 W, 3.5 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	4.1 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

NVD4C05N Series

Single N−Channel Power MOSFET 30V, 90A, 4.1mΩ

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Technology	Mounting Type	Qualification	Vgs(th) (Max) @ Id [Max]	Rds On (Max) @ Id, Vgs [Max]	Grade	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor NVD4C05NT4G	14 nC	DPAK	22 A 90 A	3.5 W 57 W	4.5 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	MOSFET (Metal Oxide)	Surface Mount	AEC-Q101	2.2 V	4.1 mOhm	Automotive	20 V	30 V	-55 °C	175 ░C	1950 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.42
		10	$ 1.56
		100	$ 1.06
		500	$ 0.85
		1000	$ 0.79
	Digi-Reel®	1	$ 2.42
		10	$ 1.56
		100	$ 1.06
		500	$ 0.85
		1000	$ 0.79
	Tape & Reel (TR)	2500	$ 0.76
		5000	$ 0.73
		12500	$ 0.71
Newark	Each	2500	$ 0.76
		10000	$ 0.73
ON Semiconductor	N/A	1	$ 1.00

Description

General part information

NVD4C05N Series

Automotive Power MOSFET 30V, 90A, 4.1 mOhm, Single N−Channel, DPAK, Logic Level. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.