NVD4C05N Series

Single N−Channel Power MOSFET 30V, 90A, 4.1mΩ

Catalog

Single N−Channel Power MOSFET 30V, 90A, 4.1mΩ

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Technology	Mounting Type	Qualification	Vgs(th) (Max) @ Id [Max]	Rds On (Max) @ Id, Vgs [Max]	Grade	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor NVD4C05NT4G	14 nC	DPAK	22 A 90 A	3.5 W 57 W	4.5 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	MOSFET (Metal Oxide)	Surface Mount	AEC-Q101	2.2 V	4.1 mOhm	Automotive	20 V	30 V	-55 °C	175 ░C	1950 pF

Catalog

Single N−Channel Power MOSFET 30V, 90A, 4.1mΩ

Key Features

• Low RDS(on)

• Low QGand Capacitance

• AEC−Q101 Qualified and PPAP Capable

• RoHS Compliant

Description

Automotive Power MOSFET 30V, 90A, 4.1 mOhm, Single N−Channel, DPAK, Logic Level. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.