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TO-252-3
Discrete Semiconductor Products

MJD127TF

Obsolete
ON Semiconductor

8.0 A, 100 V PNP DARLINGTON BIPOLAR POWER TRANSISTOR

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TO-252-3
Discrete Semiconductor Products

MJD127TF

Obsolete
ON Semiconductor

8.0 A, 100 V PNP DARLINGTON BIPOLAR POWER TRANSISTOR

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMJD127TF
Current - Collector (Ic) (Max) [Max]8 A
Current - Collector Cutoff (Max) [Max]10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 hFE
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]1.75 W
Supplier Device PackageDPAK
Transistor TypePNP - Darlington
Vce Saturation (Max) @ Ib, Ic4 V
Voltage - Collector Emitter Breakdown (Max) [Max]100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

MJD127%20(LEGACY%20FAIRCHILD) Series

The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD122 (NPN) and MJD127 (PNP) are complementary devices.Replacement Active Part Number:MJD127