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Deep-Dive with AI
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Technical Specifications
Parameters and characteristics for this part
| Specification | MJD128T4 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 8 A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 hFE |
| Frequency - Transition | 4 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power - Max [Max] | 1.75 W |
| Supplier Device Package | DPAK |
| Transistor Type | PNP - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 4 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 120 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
MJD127%20(LEGACY%20FAIRCHILD) Series
The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD122 (NPN) and MJD127 (PNP) are complementary devices.Replacement Active Part Number:MJD127
Documents
Technical documentation and resources