Discrete Semiconductor Products

LSIC2SD120D10

Obsolete

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 1.2 KV, 28 A, 57 NC, TO-263 (D2PAK)

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Discrete Semiconductor Products

Obsolete

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 1.2 KV, 28 A, 57 NC, TO-263 (D2PAK)

Technical Specifications

Parameters and characteristics for this part

Specification	LSIC2SD120D10

Capacitance @ Vr, F	582 pF
Current - Average Rectified (Io)	28 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-263-2L
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Technology	Capacitance @ Vr, F	Mounting Type	Current - Reverse Leakage @ Vr	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Package / Case
Littelfuse/Commercial Vehicle Products LSIC2SD120D20	SiC (Silicon Carbide) Schottky	1142 pF	Surface Mount	100 µA	TO-263-2L	175 ░C	-55 C	54.5 A	1.2 kV	No Recovery Time	0 ns	1.8 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Littelfuse/Commercial Vehicle Products LSIC2SD120D10	SiC (Silicon Carbide) Schottky	582 pF	Surface Mount	100 µA	TO-263-2L	175 ░C	-55 C	28 A	1.2 kV	No Recovery Time	0 ns	1.8 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 28A Surface Mount TO-263-2L

Technical documentation and resources