Discrete Semiconductor Products

SIHA180N60E-GE3

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MOSFET N-CH 600V 19A TO220

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Discrete Semiconductor Products

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MOSFET N-CH 600V 19A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	SIHA180N60E-GE3

Current - Continuous Drain (Id) @ 25°C	19 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1085 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	33 W
Rds On (Max) @ Id, Vgs	180 mOhm
Supplier Device Package	TO-220 Full Pack
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Mounting Type
Vishay General Semiconductor - Diodes Division SIHA180N60E-GE3	30 V	19 A	MOSFET (Metal Oxide)	5 V	33 W	1085 pF	N-Channel	TO-220 Full Pack	10 V	600 V	-55 °C	150 °C	TO-220-3 Full Pack	180 mOhm	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1000	$ 1.63

General part information

N-Channel 600 V 19A (Tc) 33W (Tc) Through Hole TO-220 Full Pack

Technical documentation and resources