SIHA180 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 600V 19A TO220
| Part | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Technology | Vgs(th) (Max) @ Id | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Rds On (Max) @ Id, Vgs | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 30 V | 19 A | MOSFET (Metal Oxide) | 5 V | 33 W | 1085 pF | N-Channel | TO-220 Full Pack | 10 V | 600 V | -55 °C | 150 °C | TO-220-3 Full Pack | 180 mOhm | Through Hole |