Specification	SSM6N62TU,LF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	800 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	1.2 V
FET Feature [Max]	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	177 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power - Max [Max]	500 mW
Rds On (Max) @ Id, Vgs	85 mOhm
Supplier Device Package	UF6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

SSM6N62TU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 20 V, 0.8 A, 0.085 Ω@4.5V, SOT-363F(UF6)

Part	Grade	Package / Case	Supplier Device Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Configuration	Operating Temperature	Mounting Type	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Technology	Qualification	Vgs(th) (Max) @ Id	FET Feature	FET Feature [Max]
Toshiba Semiconductor and Storage SSM6N62TU,LXHF	Automotive	6-SMD Flat Leads	UF6	20 V	177 pF	85 mOhm	2 N-Channel (Dual)	150 °C	Surface Mount	500 mW	800 mA	2 nC	MOSFET (Metal Oxide)	AEC-Q101	1 V	1.2 V	Logic Level Gate
Toshiba Semiconductor and Storage SSM6N62TU,LF		6-SMD Flat Leads	UF6	20 V	177 pF	85 mOhm	2 N-Channel (Dual)	150 °C	Surface Mount	500 mW	800 mA	2 nC	MOSFET (Metal Oxide)		1 V	1.2 V	Logic Level Gate

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 20 V, 0.8 A, 0.085 Ω@4.5V, SOT-363F(UF6)

Technical documentation and resources