High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 20 V, 0.8 A, 0.085 Ω@4.5V, SOT-363F(UF6)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 20 V, 0.8 A, 0.085 Ω@4.5V, SOT-363F(UF6)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 20 V, 0.8 A, 0.085 Ω@4.5V, SOT-363F(UF6)
| Part | Grade | Package / Case | Supplier Device Package | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs | Configuration | Operating Temperature | Mounting Type | Power - Max [Max] | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Technology | Qualification | Vgs(th) (Max) @ Id | FET Feature | FET Feature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | Automotive | 6-SMD Flat Leads | UF6 | 20 V | 177 pF | 85 mOhm | 2 N-Channel (Dual) | 150 °C | Surface Mount | 500 mW | 800 mA | 2 nC | MOSFET (Metal Oxide) | AEC-Q101 | 1 V | 1.2 V | Logic Level Gate |
Toshiba Semiconductor and Storage | 6-SMD Flat Leads | UF6 | 20 V | 177 pF | 85 mOhm | 2 N-Channel (Dual) | 150 °C | Surface Mount | 500 mW | 800 mA | 2 nC | MOSFET (Metal Oxide) | 1 V | 1.2 V | Logic Level Gate |