Specification	FQA24N50

Current - Continuous Drain (Id) @ 25°C	24 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	120 nC
Input Capacitance (Ciss) (Max) @ Vds	4500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	290 W
Rds On (Max) @ Id, Vgs	200 mOhm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FQA28N50 Series

Power MOSFET, N-Channel, QFET®, 500 V, 28.4 A, 160 mΩ, TO-3P

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	FET Type	Package / Case	Mounting Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Power Dissipation (Max) [Max]
ON Semiconductor FQA24N50	10 V	-55 °C	150 °C	200 mOhm	24 A	N-Channel	SC-65-3 TO-3P-3	Through Hole	30 V	4500 pF	MOSFET (Metal Oxide)	5 V	TO-3P	120 nC	500 V	290 W
ON Semiconductor FQA24N50_F109	10 V	-55 °C	150 °C	200 mOhm	24 A	N-Channel	SC-65-3 TO-3P-3	Through Hole	30 V	4500 pF	MOSFET (Metal Oxide)	5 V	TO-3P	120 nC	500 V	290 W
ON Semiconductor FQA24N50F	10 V	-55 °C	150 °C	200 mOhm	24 A	N-Channel	SC-65-3 TO-3P-3	Through Hole	30 V	4500 pF	MOSFET (Metal Oxide)	5 V	TO-3P	120 nC	500 V	290 W
ON Semiconductor FQA28N50F	10 V	-55 °C	150 °C	160 mOhm	28.4 A	N-Channel	SC-65-3 TO-3P-3	Through Hole	30 V	5600 pF	MOSFET (Metal Oxide)	5 V	TO-3P	140 nC	500 V		310 W
ON Semiconductor FQA28N50	10 V	-55 °C	150 °C	160 mOhm	28.4 A	N-Channel	SC-65-3 TO-3P-3	Through Hole	30 V	5600 pF	MOSFET (Metal Oxide)	5 V	TO-3P	140 nC	500 V		310 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FQA28N50 Series

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.