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SOT 1023
Discrete Semiconductor Products

NVMYS1D2N04CLTWG

Active
ON Semiconductor

POWER MOSFET 40 V, 1.1 MOHMS, 258 A, SINGLE N-CHANNEL

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DocumentsDatasheetDatasheet+1
SOT 1023
Discrete Semiconductor Products

NVMYS1D2N04CLTWG

Active
ON Semiconductor

POWER MOSFET 40 V, 1.1 MOHMS, 258 A, SINGLE N-CHANNEL

Deep-Dive with AI

DocumentsDatasheetDatasheet+1

Technical Specifications

Parameters and characteristics for this part

SpecificationNVMYS1D2N04CLTWG
Current - Continuous Drain (Id) @ 25°C258 A, 44 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs109 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds6330 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSOT-1023, 4-LFPAK
Power Dissipation (Max)3.9 W, 134 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs1.2 mOhm
Supplier Device PackageLFPAK4
Supplier Device Package [x]5
Supplier Device Package [y]6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.88
10$ 1.86
100$ 1.29
500$ 1.04
1000$ 0.96
Digi-Reel® 1$ 2.88
10$ 1.86
100$ 1.29
500$ 1.04
1000$ 0.96
Tape & Reel (TR) 3000$ 0.89
NewarkEach (Supplied on Full Reel) 2500$ 0.96
5000$ 0.93
ON SemiconductorN/A 1$ 0.82

Description

General part information

NVMYS1D2N04CL Series

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.