NVMYS1D2N04CL Series

Power MOSFET 40 V, 1.1 mOhms, 258 A, Single N-Channel

Catalog

Power MOSFET 40 V, 1.1 mOhms, 258 A, Single N-Channel

Part	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Qualification	Power Dissipation (Max)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Grade	Vgs(th) (Max) @ Id	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Technology	Current - Continuous Drain (Id) @ 25°C	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor NVMYS1D2N04CLTWG	109 nC	SOT-1023 4-LFPAK	4.5 V 10 V	20 V	AEC-Q101	3.9 W 134 W	Surface Mount	-55 °C	175 ░C	40 V	1.2 mOhm	6330 pF	Automotive	2 V	5	LFPAK4	6	MOSFET (Metal Oxide)	44 A 258 A	N-Channel
ON Semiconductor NVMYS1D3N04CTWG		SOT-1023 4-LFPAK	10 V	20 V	AEC-Q101	3.9 W 134 W	Surface Mount	-55 °C	175 ░C	40 V	1.15 mOhm	4855 pF	Automotive	3.5 V	5	LFPAK4	6	MOSFET (Metal Oxide)	43 A 252 A	N-Channel	75 nC

Catalog

Power MOSFET 40 V, 1.1 mOhms, 258 A, Single N-Channel

Key Features

• Small Footprint (5x6mm)

• Low RDS (on)

• Low QGand Capacitance

• LFPAK4 Package, Industry Standard

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

Description

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.