Zenode.ai Logo
Beta
ONSEMI FDS4675
Discrete Semiconductor Products

FDS3890

Active
ON Semiconductor

DUAL MOSFET, DUAL N CHANNEL, 4.7 A, 80 V, 0.034 OHM, 10 V, 2.3 V ROHS COMPLIANT: YES

Deep-Dive with AI

Search across all available documentation for this part.

ONSEMI FDS4675
Discrete Semiconductor Products

FDS3890

Active
ON Semiconductor

DUAL MOSFET, DUAL N CHANNEL, 4.7 A, 80 V, 0.034 OHM, 10 V, 2.3 V ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

SpecificationFDS3890
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C4.7 A
Drain to Source Voltage (Vdss)80 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs35 nC
Input Capacitance (Ciss) (Max) @ Vds1180 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power - Max [Max]900 mW
Rds On (Max) @ Id, Vgs [Max]44 mOhm
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.57
10$ 1.66
100$ 1.13
500$ 0.91
1000$ 0.91
Digi-Reel® 1$ 2.57
10$ 1.66
100$ 1.13
500$ 0.91
1000$ 0.91
Tape & Reel (TR) 2500$ 0.76
5000$ 0.74
NewarkEach 1$ 3.04
10$ 2.15
100$ 1.62
500$ 1.37
1000$ 1.31
2500$ 1.23
ON SemiconductorN/A 1$ 0.79

Description

General part information

FDS3890 Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON)specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.