FDS3890 Series

80V N-Channel Dual PowerTrench® MOSFET 4.7A, 44mΩ

Catalog

80V N-Channel Dual PowerTrench® MOSFET 4.7A, 44mΩ

Part	FET Feature	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Power - Max [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Configuration	Package / Case	Package / Case [y]	Package / Case [x]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Technology	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDS3890	Logic Level Gate	80 V	35 nC	Surface Mount	900 mW	8-SOIC	44 mOhm	4 V	2 N-Channel (Dual)	8-SOIC	3.9 mm	0.154 in	1180 pF	4.7 A	MOSFET (Metal Oxide)	-55 °C	175 ░C

Catalog

80V N-Channel Dual PowerTrench® MOSFET 4.7A, 44mΩ

Key Features

• 4.7 A, 80 V

• RDS(on)= 44 mΩ@ VGS= 10 V

• RDS(on)= 50 mΩ @ VGS= 6 V

• Fast switching speed

• High performance trench technology for extremely low RDS(ON)

• High power and current handling capability

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON)specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.