Specification	NTP52N10G

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	135 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3150 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	214 W
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

NTP52N10 Series

Power MOSFET 60 A, 100 V, N-Channel Enhancement Mode TO-220

Part	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Package / Case	FET Type	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Power Dissipation (Max)	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Vgs(th) (Max) @ Id
ON Semiconductor NTP52N10G	10 V	100 V	TO-220-3	N-Channel	Through Hole	-55 °C	175 ░C	3150 pF	TO-220	214 W	MOSFET (Metal Oxide)	30 mOhm	60 A	135 nC	20 V	4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Power MOSFET 60 A, 100 V, N-Channel Enhancement Mode TO-220

Technical documentation and resources