NTP52N10 Series

Power MOSFET 60 A, 100 V, N-Channel Enhancement Mode TO-220

Catalog

Power MOSFET 60 A, 100 V, N-Channel Enhancement Mode TO-220

Part	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Package / Case	FET Type	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Power Dissipation (Max)	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Vgs(th) (Max) @ Id
ON Semiconductor NTP52N10G	10 V	100 V	TO-220-3	N-Channel	Through Hole	-55 °C	175 ░C	3150 pF	TO-220	214 W	MOSFET (Metal Oxide)	30 mOhm	60 A	135 nC	20 V	4 V

Power MOSFET 60 A, 100 V, N-Channel Enhancement Mode TO-220

• Source-to-Drain Diode Recovery Time comparable to a Discrete Fast Recovery Diode

• Avalanche Energy Specified

• IDSSand RDS(on)Specified at Elevated Temperature

• Pb-Free Package is Available

Power MOSFET 60 A, 100 V, N-Channel Enhancement Mode TO-220