Discrete Semiconductor Products
STF9NM60N
ActiveSTMicroelectronics
POWER MOSFET, N CHANNEL, 6.5 A, 600 V, 0.63 OHM, 10 V, 3 V ROHS COMPLIANT: YES
Discrete Semiconductor Products
STF9NM60N
ActiveSTMicroelectronics
POWER MOSFET, N CHANNEL, 6.5 A, 600 V, 0.63 OHM, 10 V, 3 V ROHS COMPLIANT: YES
Technical Specifications
Parameters and characteristics for this part
| Specification | STF9NM60N |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6.5 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 17.4 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 452 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 25 W |
| Rds On (Max) @ Id, Vgs | 745 mOhm |
| Supplier Device Package | TO-220FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STF9NM60N Series
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
Documents
Technical documentation and resources