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DFN0606-3
Discrete Semiconductor Products

PMH260UNEH

Active
Freescale Semiconductor - NXP

20V 1.2A 310MΩ@4.5V,0.7A 360MW 950MV 1 N-CHANNEL DFN0606-3 MOSFETS ROHS

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DFN0606-3
Discrete Semiconductor Products

PMH260UNEH

Active
Freescale Semiconductor - NXP

20V 1.2A 310MΩ@4.5V,0.7A 360MW 950MV 1 N-CHANNEL DFN0606-3 MOSFETS ROHS

Technical Specifications

Parameters and characteristics for this part

SpecificationPMH260UNEH
Current - Continuous Drain (Id) @ 25°C1.2 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]0.95 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]41 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case3-XFDFN
Power Dissipation (Max)2.23 W, 360 mW
Rds On (Max) @ Id, Vgs310 mOhm
Supplier Device PackageDFN0606-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id950 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.33
10$ 0.23
100$ 0.12
500$ 0.10
1000$ 0.07
2000$ 0.06
5000$ 0.06
Digi-Reel® 1$ 0.33
10$ 0.23
100$ 0.12
500$ 0.10
1000$ 0.07
2000$ 0.06
5000$ 0.06
Tape & Reel (TR) 10000$ 0.05
30000$ 0.05
50000$ 0.04
250000$ 0.04
LCSCPiece 5$ 0.21
50$ 0.17
150$ 0.15
500$ 0.13
2500$ 0.12
5000$ 0.11

Description

General part information

PMH260UNE Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.