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20 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, N-channel Trench MOSFET
20 V, N-channel Trench MOSFET
| Part | Technology | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Supplier Device Package | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Package / Case | Vgs (Max) | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Freescale Semiconductor - NXP | MOSFET (Metal Oxide) | 1.5 V 4.5 V | 2.23 W 360 mW | N-Channel | -55 °C | 150 °C | 0.95 nC | 41 pF | 1.2 A | Surface Mount | DFN0606-3 | 20 V | 950 mV | 3-XFDFN | 8 V | 310 mOhm |