Discrete Semiconductor Products

STD7ANM60N

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STMicroelectronics

N-CHANNEL 600 V, 800 MOHM TYP., 5 A MDMESH II POWER MOSFET IN A DPAK PACKAGE

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DocumentsTN1224 UM1575 +16

Discrete Semiconductor Products

STD7ANM60N

Active

STMicroelectronics

N-CHANNEL 600 V, 800 MOHM TYP., 5 A MDMESH II POWER MOSFET IN A DPAK PACKAGE

Deep-Dive with AI

DocumentsTN1224 UM1575 +16

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STD7ANM60N

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	363 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	45 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	900 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

STD7ANM60N Series

N-channel 600 V, 800 mOhm typ., 5 A MDmesh II Power MOSFET in a DPAK package

Part	Qualification	FET Type	Grade	Power Dissipation (Max)	Operating Temperature	Supplier Device Package	Vgs (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case
STMicroelectronics STD7ANM60N	AEC-Q101	N-Channel	Automotive	45 W	150 °C	DPAK	25 V	MOSFET (Metal Oxide)	14 nC	Surface Mount	600 V	900 mOhm	5 A	4 V	10 V	363 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.63
		10	$ 1.33
		100	$ 1.03
		500	$ 0.88
		1000	$ 0.71
	Digi-Reel®	1	$ 1.63
		10	$ 1.33
		100	$ 1.03
		500	$ 0.88
		1000	$ 0.71
	Tape & Reel (TR)	2500	$ 0.67
		5000	$ 0.64
		12500	$ 0.61
Newark	Each (Supplied on Cut Tape)	1	$ 2.12
		10	$ 1.54
		25	$ 1.45
		50	$ 1.36
		100	$ 1.28
		250	$ 1.19
		500	$ 1.10
		1000	$ 1.02

Description

General part information

STD7ANM60N Series

This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.