Discrete Semiconductor Products

IXFB150N65X2

Active

Littelfuse/Commercial Vehicle Products

MOSFET, 150A, 650V, 1.56KW, PLUS264 ROHS COMPLIANT: YES

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Discrete Semiconductor Products

IXFB150N65X2

Active

Littelfuse/Commercial Vehicle Products

MOSFET, 150A, 650V, 1.56KW, PLUS264 ROHS COMPLIANT: YES

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXFB150N65X2

Current - Continuous Drain (Id) @ 25°C	150 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	430 nC
Input Capacitance (Ciss) (Max) @ Vds	20400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max) [Max]	1560 W
Rds On (Max) @ Id, Vgs	17 mOhm
Supplier Device Package	PLUS264™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

IXFB150N65X2 Series

DiscMSFT NChUltraJnctn X2Class TO-264(3)

Part	Mounting Type	Drain to Source Voltage (Vdss)	FET Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Package / Case	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds
Littelfuse/Commercial Vehicle Products IXFB150N65X2	Through Hole	650 V	N-Channel	150 A	17 mOhm	TO-264-3 TO-264AA	30 V	-55 °C	150 °C	PLUS264™	430 nC	MOSFET (Metal Oxide)	5.5 V	1560 W	10 V	20400 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 24.07
		25	$ 21.96
Newark	Each	1	$ 27.62
		5	$ 25.73
		10	$ 24.64
		25	$ 23.50
		100	$ 22.65

Description

General part information

IXFB150N65X2 Series

Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings

Documents

Technical documentation and resources

No documents available