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IXFB150N65X2 Series

DiscMSFT NChUltraJnctn X2Class TO-264(3)

Catalog

DiscMSFT NChUltraJnctn X2Class TO-264(3)

Key Features

• Ultra low on-resistance RDS(ON) and gate charge Qg
• Fast body diode
• dv/dt ruggedness
• Avalanche rated
• Low package inductance
• International standard packages

Description

AI
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings