Discrete Semiconductor Products

JANTXV2N5667S

Unknown

Microchip Technology

300V 5A 1.2W NPN POWER BJT THT TO-39 ROHS COMPLIANT: YES

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Search across all available documentation for this part.

DocumentsDatasheet 2N5664 2N5665 2N5666 2N5667S

Discrete Semiconductor Products

JANTXV2N5667S

Unknown

Microchip Technology

300V 5A 1.2W NPN POWER BJT THT TO-39 ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsDatasheet 2N5664 2N5665 2N5666 2N5667S

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	JANTXV2N5667S

Current - Collector (Ic) (Max)	5 A
Current - Collector Cutoff (Max) [Max]	200 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	25 hFE
Grade	Military
Mounting Type	Through Hole
Package / Case	TO-39-3 Metal Can, TO-205AD
Power - Max [Max]	1.2 W
Qualification	MIL-PRF-19500/455
Supplier Device Package	TO-39 (TO-205AD)
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max)	300 V

JANTXV2N5667S-Transistor Series

NPN Silicon Power Switching 200V to 300V, 5A

Part	Package / Case	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Grade	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Qualification	Transistor Type	Current - Collector (Ic) (Max)	Power - Max [Max]
Microchip Technology JANS2N5667S	TO-205AD TO-39-3 Metal Can	200 nA	25 hFE	Military	TO-39 (TO-205AD)	300 V	1 V	Through Hole	MIL-PRF-19500/455	NPN	5 A	1.2 W
Microchip Technology 2N5667	TO-205AA TO-5-3 Metal Can	200 nA	25 hFE		TO-5AA	300 V	1 V	Through Hole		NPN	5 A	1.2 W
Microchip Technology JANTXV2N5667S	TO-205AD TO-39-3 Metal Can	200 nA	25 hFE	Military	TO-39 (TO-205AD)	300 V	1 V	Through Hole	MIL-PRF-19500/455	NPN	5 A	1.2 W
Microchip Technology 2N5667S	TO-205AD TO-39-3 Metal Can	200 nA	25 hFE		TO-39 (TO-205AD)	300 V	1 V	Through Hole		NPN	5 A	1.2 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 19.32
Microchip Direct	N/A	1	$ 20.80
Newark	Each	100	$ 19.32
		500	$ 18.58

Description

General part information

JANTXV2N5667S-Transistor Series

This specification covers the performance requirements for NPN, silicon, power, 2N5664, 2N5665, 2N5666 and 2N5667 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/455. Two levels of product assurance are provided for each un-encapsulated device type as specified in MIL-PRF-19500/455. Provisions for radiation hardness assurance (RHA) to two radiation levels ("R" and "F") are provided for JANTXV and JANHC product assurance level. Provisions for RHA to eight radiation levels are provided for JANS and JANKC product assurance level. RHA level designators; "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements. The device package for the encapsulated device types are as follows: TO-66, TO-5 and TO-39, and surface mount version U3. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/455.