Discrete Semiconductor Products

NRVBA160T3G-VF01

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ON Semiconductor

DIODE SCHOTTKY 60V 1A SMA

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Discrete Semiconductor Products

NRVBA160T3G-VF01

Active

ON Semiconductor

DIODE SCHOTTKY 60V 1A SMA

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NRVBA160T3G-VF01

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	200 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-214AC, SMA
Qualification	AEC-Q101
Speed	200 mA, 500 ns
Supplier Device Package	SMA
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	60 V
Voltage - Forward (Vf) (Max) @ If	510 mV

MBRA160T3 Series

1.0 A, 60 V, Schottky Power Rectifier, Surface Mount

Part	Current - Average Rectified (Io)	Package / Case	Current - Reverse Leakage @ Vr	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Speed	Mounting Type	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Qualification	Grade
ON Semiconductor MBRA160T3	1 A	DO-214AC SMA	200 µA	Schottky	60 V	510 mV	200 mA 500 ns	Surface Mount	SMA
ON Semiconductor NRVBA160T3G-VF01	1 A	DO-214AC SMA	200 µA	Schottky	60 V	510 mV	200 mA 500 ns	Surface Mount	SMA	150 °C	-55 °C	AEC-Q101	Automotive
ON Semiconductor NRVBA160NT3G	1 A	DO-214AC SMA	200 µA	Schottky	60 V	510 mV	200 mA 500 ns	Surface Mount	SMA	150 °C	-55 °C	AEC-Q101	Automotive
ON Semiconductor NRVBA160T3G	1 A	DO-214AC SMA	200 µA	Schottky	60 V	510 mV	200 mA 500 ns	Surface Mount	SMA	150 °C	-55 °C
ON Semiconductor MBRA160T3G	1 A	DO-214AC SMA	200 µA	Schottky	60 V	510 mV	200 mA 500 ns	Surface Mount	SMA	150 °C	-55 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MBRA160T3 Series

The Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency switching power supplies, free wheeling diodes and polarity protection diodes.

Documents

Technical documentation and resources