MBRA160T3 Series

1.0 A, 60 V, Schottky Power Rectifier, Surface Mount

Catalog

1.0 A, 60 V, Schottky Power Rectifier, Surface Mount

Part	Current - Average Rectified (Io)	Package / Case	Current - Reverse Leakage @ Vr	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Speed	Mounting Type	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Qualification	Grade
ON Semiconductor MBRA160T3	1 A	DO-214AC SMA	200 µA	Schottky	60 V	510 mV	200 mA 500 ns	Surface Mount	SMA
ON Semiconductor NRVBA160T3G-VF01	1 A	DO-214AC SMA	200 µA	Schottky	60 V	510 mV	200 mA 500 ns	Surface Mount	SMA	150 °C	-55 °C	AEC-Q101	Automotive
ON Semiconductor NRVBA160NT3G	1 A	DO-214AC SMA	200 µA	Schottky	60 V	510 mV	200 mA 500 ns	Surface Mount	SMA	150 °C	-55 °C	AEC-Q101	Automotive
ON Semiconductor NRVBA160T3G	1 A	DO-214AC SMA	200 µA	Schottky	60 V	510 mV	200 mA 500 ns	Surface Mount	SMA	150 °C	-55 °C
ON Semiconductor MBRA160T3G	1 A	DO-214AC SMA	200 µA	Schottky	60 V	510 mV	200 mA 500 ns	Surface Mount	SMA	150 °C	-55 °C

Catalog

1.0 A, 60 V, Schottky Power Rectifier, Surface Mount

Key Features

• Small Compact Surface Mountable Package with J–Bent Leads

• Rectangular Package for Automated Handling

• Highly Stable Oxide Passivated Junction

• Very Low Forward Voltage Drop

• Guardring for Stress ProtectionMechanical Characteristics:

• Case: Epoxy, Molded

• Weight: 70 mg (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds

• Shipped in 12 mm tape, 5000 units per 13 inch reel

• Polarity: Cathode Lead Indicated by Polarity Band

• ESD Ratings: Machine Model = CHuman Body Model = 3B

• Marking: B16

• All Packages are Pb-Free

• NRVBA Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements;AEC-Q101 Qualified and PPAP Capable

Description

The Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency switching power supplies, free wheeling diodes and polarity protection diodes.