LM5114BMFX/NOPB
Active7.6-A/1.3-A SINGLE CHANNEL GATE DRIVER WITH 4-V UVLO AND SPLIT OUTPUTS
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LM5114BMFX/NOPB
Active7.6-A/1.3-A SINGLE CHANNEL GATE DRIVER WITH 4-V UVLO AND SPLIT OUTPUTS
Technical Specifications
Parameters and characteristics for this part
| Specification | LM5114BMFX/NOPB |
|---|---|
| Channel Type | Single |
| Current - Peak Output (Source, Sink) [custom] | 1.3 A |
| Current - Peak Output (Source, Sink) [custom] | 7.6 A |
| Driven Configuration | Low-Side |
| Gate Type | N-Channel MOSFET |
| Input Type | Non-Inverting, Inverting |
| Mounting Type | Surface Mount |
| Number of Drivers | 1 |
| Operating Temperature [Max] | 125 ¯C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | SOT-23-6 |
| Rise / Fall Time (Typ) [custom] | 12.5 ns |
| Rise / Fall Time (Typ) [custom] | 82 ns |
| Supplier Device Package | SOT-23-6 |
| Voltage - Supply [Max] | 12.6 V |
| Voltage - Supply [Min] | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 3000 | $ 0.69 | |
| 6000 | $ 0.66 | |||
| 15000 | $ 0.63 | |||
| Texas Instruments | LARGE T&R | 1 | $ 1.21 | |
| 100 | $ 0.93 | |||
| 250 | $ 0.69 | |||
| 1000 | $ 0.49 | |||
Description
General part information
LM5114 Series
The LM5114 is designed to drive low-side MOSFETs in boost-type configurations or to drive secondary synchronous MOSFETs in isolated topologies. With strong sink current capability, the LM5114 can drive multiple FETs in parallel. The LM5114 also has the features necessary to drive low-side enhancement mode Gallium Nitride (GaN) FETs. The LM5114 provides inverting and noninverting inputs to satisfy requirements for inverting and Noninverting gate drive in a single device type. The inputs of the LM5114 are TTL/CMOS Logic compatible and withstand input voltages up to 14 V regardless of the VDD voltage. The LM5114 has split gate outputs, providing flexibility to adjust the turnon and turnoff strength independently. The LM5114 has fast switching speed and minimized propagation delays, facilitating high-frequency operation. The LM5114 is available in a 6-pin SOT-23 package and a 6-pin WSON package with an exposed pad to aid thermal dissipation.
The LM5114 is designed to drive low-side MOSFETs in boost-type configurations or to drive secondary synchronous MOSFETs in isolated topologies. With strong sink current capability, the LM5114 can drive multiple FETs in parallel. The LM5114 also has the features necessary to drive low-side enhancement mode Gallium Nitride (GaN) FETs. The LM5114 provides inverting and noninverting inputs to satisfy requirements for inverting and Noninverting gate drive in a single device type. The inputs of the LM5114 are TTL/CMOS Logic compatible and withstand input voltages up to 14 V regardless of the VDD voltage. The LM5114 has split gate outputs, providing flexibility to adjust the turnon and turnoff strength independently. The LM5114 has fast switching speed and minimized propagation delays, facilitating high-frequency operation. The LM5114 is available in a 6-pin SOT-23 package and a 6-pin WSON package with an exposed pad to aid thermal dissipation.
Documents
Technical documentation and resources
