LM5114 Series

7.6-A/1.3-A single channel gate driver with 4-V UVLO and split outputs

Catalog

7.6-A/1.3-A single channel gate driver with 4-V UVLO and split outputs

Part	Package / Case	Input Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Voltage - Supply [Min]	Voltage - Supply [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Driven Configuration	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Mounting Type	Number of Drivers	Supplier Device Package	Channel Type	Gate Type
Texas Instruments LM5114BMF/S7003110	SOT-23-6	Inverting Non-Inverting	12.5 ns	82 ns	4 V	12.6 V	-40 °C	125 ¯C	Low-Side	1.3 A	7.6 A	Surface Mount	1	SOT-23-6	Single	N-Channel MOSFET
Texas Instruments LM5114BSD/NOPB		Inverting Non-Inverting	12.5 ns	82 ns	4 V	12.6 V	-40 °C	125 ¯C	Low-Side	1.3 A	7.6 A	Surface Mount	1	6-WSON (3x3)	Single	N-Channel MOSFET
Texas Instruments LM5114BSDX/NOPB		Inverting Non-Inverting	12.5 ns	82 ns	4 V	12.6 V	-40 °C	125 ¯C	Low-Side	1.3 A	7.6 A	Surface Mount	1	6-WSON (3x3)	Single	N-Channel MOSFET
Texas Instruments LM5114BMFX/NOPB	SOT-23-6	Inverting Non-Inverting	12.5 ns	82 ns	4 V	12.6 V	-40 °C	125 ¯C	Low-Side	1.3 A	7.6 A	Surface Mount	1	SOT-23-6	Single	N-Channel MOSFET
Texas Instruments LM5114AMFX/S7003103	SOT-23-6	Inverting Non-Inverting	12.5 ns	82 ns	4 V	12.6 V	-40 °C	125 ¯C	Low-Side	1.3 A	7.6 A	Surface Mount	1	SOT-23-6	Single	N-Channel MOSFET
Texas Instruments LM5114BMF/S7003094	SOT-23-6	Inverting Non-Inverting	12.5 ns	82 ns	4 V	12.6 V	-40 °C	125 ¯C	Low-Side	1.3 A	7.6 A	Surface Mount	1	SOT-23-6	Single	IGBT N-Channel MOSFET
Texas Instruments LM5114AMFX/NOPB	SOT-23-6	Inverting Non-Inverting	12.5 ns	82 ns	4 V	12.6 V	-40 °C	125 ¯C	Low-Side	1.3 A	7.6 A	Surface Mount	1	SOT-23-6	Single	N-Channel MOSFET
Texas Instruments LM5114BMF/NOPB	SOT-23-6	Inverting Non-Inverting	12.5 ns	82 ns	4 V	12.6 V	-40 °C	125 ¯C	Low-Side	1.3 A	7.6 A	Surface Mount	1	SOT-23-6	Single	N-Channel MOSFET
Texas Instruments LM5114AMF/S7003109	SOT-23-6	Inverting Non-Inverting	12.5 ns	82 ns	4 V	12.6 V	-40 °C	125 ¯C	Low-Side	1.3 A	7.6 A	Surface Mount	1	SOT-23-6	Single	N-Channel MOSFET
Texas Instruments LM5114ASD/NOPB		Inverting Non-Inverting	12.5 ns	82 ns	4 V	12.6 V	-40 °C	125 ¯C	Low-Side	1.3 A	7.6 A	Surface Mount	1	6-WSON (3x3)	Single	N-Channel MOSFET

Catalog

7.6-A/1.3-A single channel gate driver with 4-V UVLO and split outputs

Key Features

• Independent Source and Sink Outputs forControllable Rise and Fall Times4-V to 12.6-V Single Power Supply7.6-A/1.3-A Peak Sink and Source Drive Current0.23-Ω Open-drain Pulldown Sink Output2-Ω Open-drain Pullup Source Output12-ns (Typical) Propagation DelayMatching Delay Time Between Inverting andNoninverting InputsTTL/CMOS Logic Inputs0.68-V Input HysteresisUp to 14-V Logic Inputs (Regardless of VDD Voltage)Low Input Capacitance: 2.5-pF (Typical)–40°C to 125°C Operating Temperature RangePin-to-Pin Compatible With MAX50486-Pin SOT-23Independent Source and Sink Outputs forControllable Rise and Fall Times4-V to 12.6-V Single Power Supply7.6-A/1.3-A Peak Sink and Source Drive Current0.23-Ω Open-drain Pulldown Sink Output2-Ω Open-drain Pullup Source Output12-ns (Typical) Propagation DelayMatching Delay Time Between Inverting andNoninverting InputsTTL/CMOS Logic Inputs0.68-V Input HysteresisUp to 14-V Logic Inputs (Regardless of VDD Voltage)Low Input Capacitance: 2.5-pF (Typical)–40°C to 125°C Operating Temperature RangePin-to-Pin Compatible With MAX50486-Pin SOT-23

Description

The LM5114 is designed to drive low-side MOSFETs in boost-type configurations or to drive secondary synchronous MOSFETs in isolated topologies. With strong sink current capability, the LM5114 can drive multiple FETs in parallel. The LM5114 also has the features necessary to drive low-side enhancement mode Gallium Nitride (GaN) FETs. The LM5114 provides inverting and noninverting inputs to satisfy requirements for inverting and Noninverting gate drive in a single device type. The inputs of the LM5114 are TTL/CMOS Logic compatible and withstand input voltages up to 14 V regardless of the VDD voltage. The LM5114 has split gate outputs, providing flexibility to adjust the turnon and turnoff strength independently. The LM5114 has fast switching speed and minimized propagation delays, facilitating high-frequency operation. The LM5114 is available in a 6-pin SOT-23 package and a 6-pin WSON package with an exposed pad to aid thermal dissipation. The LM5114 is designed to drive low-side MOSFETs in boost-type configurations or to drive secondary synchronous MOSFETs in isolated topologies. With strong sink current capability, the LM5114 can drive multiple FETs in parallel. The LM5114 also has the features necessary to drive low-side enhancement mode Gallium Nitride (GaN) FETs. The LM5114 provides inverting and noninverting inputs to satisfy requirements for inverting and Noninverting gate drive in a single device type. The inputs of the LM5114 are TTL/CMOS Logic compatible and withstand input voltages up to 14 V regardless of the VDD voltage. The LM5114 has split gate outputs, providing flexibility to adjust the turnon and turnoff strength independently. The LM5114 has fast switching speed and minimized propagation delays, facilitating high-frequency operation. The LM5114 is available in a 6-pin SOT-23 package and a 6-pin WSON package with an exposed pad to aid thermal dissipation.