Discrete Semiconductor Products

HUF75344P3

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ON Semiconductor

POWER MOSFET, N CHANNEL, 55 V, 75 A, 0.008 OHM, TO-220AB, THROUGH HOLE

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DocumentsDatasheet Product Change Notice EN +1

Discrete Semiconductor Products

HUF75344P3

Active

ON Semiconductor

POWER MOSFET, N CHANNEL, 55 V, 75 A, 0.008 OHM, TO-220AB, THROUGH HOLE

Deep-Dive with AI

DocumentsDatasheet Product Change Notice EN +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	HUF75344P3

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	285 W
Rds On (Max) @ Id, Vgs	8 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

HUF75344P3 Series

N-Channel UltraFET<sup>®</sup> Power MOSFET 55V, 75A, 8mΩ

Part	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case
ON Semiconductor HUF75344G3	285 W	10 V	75 A	20 V	55 V	Through Hole	8 mOhm	4 V	MOSFET (Metal Oxide)	3200 pF	N-Channel	TO-247-3	-55 °C	175 ░C	TO-247-3
ON Semiconductor HUF75344P3	285 W	10 V	75 A	20 V	55 V	Through Hole	8 mOhm	4 V	MOSFET (Metal Oxide)	3200 pF	N-Channel	TO-220-3	-55 °C	175 ░C	TO-220-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 3.88
		10	$ 2.55
		100	$ 1.79
		500	$ 1.47
		1000	$ 1.36
		2000	$ 1.34
Newark	Each	500	$ 1.43
ON Semiconductor	N/A	1	$ 1.43

Description

General part information

HUF75344P3 Series

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75344.

Documents

Technical documentation and resources

Datasheet

Product Change Notice EN

Datasheet

Package Drawing-340AT-TO-220-3LD

Package Drawing