HUF75344P3 Series

N-Channel UltraFET® Power MOSFET 55V, 75A, 8mΩ

Catalog

N-Channel UltraFET® Power MOSFET 55V, 75A, 8mΩ

Part	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case
ON Semiconductor HUF75344G3	285 W	10 V	75 A	20 V	55 V	Through Hole	8 mOhm	4 V	MOSFET (Metal Oxide)	3200 pF	N-Channel	TO-247-3	-55 °C	175 ░C	TO-247-3
ON Semiconductor HUF75344P3	285 W	10 V	75 A	20 V	55 V	Through Hole	8 mOhm	4 V	MOSFET (Metal Oxide)	3200 pF	N-Channel	TO-220-3	-55 °C	175 ░C	TO-220-3

Catalog

N-Channel UltraFET® Power MOSFET 55V, 75A, 8mΩ

Key Features

• 75A, 55V

• Simulation Models

• Temperature Compensated PSPICE® and SABER™Models

• Thermal Impedance PSPICE and SABER Models

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

• TB334, "Guidelines for Soldering Surface MountComponents to PC Boards"

Description

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75344.