2N3019P
ActiveSMALL-SIGNAL BJT TO-5 ROHS COMPLIANT: YES
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2N3019P
ActiveSMALL-SIGNAL BJT TO-5 ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N3019P |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1 A |
| Current - Collector Cutoff (Max) [Max] | 10 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 100 |
| Mounting Type | Through Hole |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Power - Max [Max] | 800 mW |
| Supplier Device Package | TO-5AA |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 500 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 80 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 19.64 | |
| Microchip Direct | N/A | 1 | $ 21.14 | |
| Newark | Each | 100 | $ 19.63 | |
| 500 | $ 18.88 | |||
Description
General part information
2N3019P-Transistor-PIND Series
This specification covers the performance requirements for NPN, silicon, low-power 2N3019, 2N3057A and 2N3700 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/391. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eleven radiation levels are provided for quality levels JANTXV, JANS, JANHC, and JANKC. RHA level designators "E", "K", "U", "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. The device packages for the encapsulated device types are as follows: TO-205AA and TO-205AD (formerly TO-5 and TO-39), TO-206AB (formerlyTO-46), three terminal round metal can TO-206AA (formerly TO-18), and four terminal SMD package UB and UBC.
Documents
Technical documentation and resources